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Aktive Komponenten

SiC Mosfets

Bild	Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
	G3R10MT07-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		750	10	100	100000	-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R10MT07-CAU	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		750	10	100	100000	-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G4R10MT12-CAU	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1200	10	120	120000	-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G4R10MT12-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1200	10	120	120000	-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R12MT12-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1200	12	100	100000	-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R20MT12-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1200	20	60	60000	-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R30MT12-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1200	30	45	45000	-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R20MT17-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1700	20	75	75000	-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G3R45MT17-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		1700	45	35	35000	-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G2R50MT33-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		3300	50	50	50000	-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Normally Off-stable temperature up to 175° C -Industry-Leading UIL and short-Circuit Robustness		Anfragen
	G2R300MT65-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		6500	300	10	10000	-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and reliable body Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature		Anfragen
	G2R325MS65-CAL	GeneSiC	Bare Die	SiC Mosfets	Aktive Komponenten		6500	325	10	10000	-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and Reliable Integrated Schottky Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature		Anfragen
	GP2T020A120X-SBT	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	sawn on blue tape	1200	20				in production	Anfragen
	GP2T020A120X	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	unsawn wafer	1200	20				in production	Anfragen
	GP2T040A120X-SBT	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	sawn on blue tape	1200	40				in production	Anfragen
	GP2T040A120X	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	unsawn wafer	1200	40				in production	Anfragen
	GP2T080A120X-SBT	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	sawn on blue tape	1200	80				in production	Anfragen
	GP2T080A120X	SemiQ	Bare Die	SiC Mosfets	Aktive Komponenten	unsawn wafer	1200	80				in production	Anfragen

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